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RF/IF & RFID
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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FCP7N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | SuperFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 11A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 600MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 83W | 35 ns | 5V | 83W Tc | 7A | SWITCHING | 75 ns | SILICON | N-Channel | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 920pF @ 25V | 30nC @ 10V | 55ns | 32 ns | 30V | 600V | 7A | 7A Tc | 10V | ±30V | |||||||||||||||||||||||||
| FDPF33N25TRDTU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack, Formed Leads | not_compliant | Through Hole | 2.565g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 37W Tc | N-Channel | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 2135pF @ 25V | 48nC @ 10V | 33A | 250V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP120N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2004 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | 12MOhm | Through Hole | 1.8g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 170W | 27 ns | 2.5V | 170W Tc | 74A | SWITCHING | 39 ns | SILICON | N-Channel | 12m Ω @ 74A, 10V | 4.5V @ 250μA | 5605pF @ 25V | 86nC @ 10V | 105ns | 15 ns | 20V | 100V | 74A Tc | 296A | 10V | ±20V | ||||||||||||||||||||||||||
| FDP100N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | 10MOhm | Through Hole | 1.8g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 208W | 70 ns | 2.5V | 208W Tc | 75A | SWITCHING | 125 ns | SILICON | N-Channel | 10m Ω @ 75A, 10V | 4.5V @ 250μA | 7300pF @ 25V | 100nC @ 10V | 265ns | 115 ns | 20V | 100V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||
| FDPF13N50FT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | 3 | TO-220-3 Full Pack | not_compliant | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 42W | 28 ns | 42W Tc | 12A | SWITCHING | 0.54Ohm | 75 ns | SILICON | N-Channel | 540m Ω @ 6A, 10V | 5V @ 250μA | 1930pF @ 25V | 39nC @ 10V | 54ns | 47 ns | 30V | 500V | 12A Tc | 48A | 684 mJ | 10V | ±30V | ||||||||||||||||||||||||
| FQPF45N15V2 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 45A | No | 3 | TO-220-3 Full Pack | Through Hole | 2.27g | -55°C~150°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 66W | 22 ns | 66W Tc | 45A | SWITCHING | 0.04Ohm | 224 ns | SILICON | N-Channel | 40m Ω @ 22.5A, 10V | 4V @ 250μA | 3030pF @ 25V | 94nC @ 10V | 232ns | 246 ns | 30V | 150V | 45A Tc | 10V | ±30V | |||||||||||||||||||||||||||||
| FCPF190N65FL1 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | SuperFET® II | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | not_compliant | 190mOhm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 25 ns | 39W Tc | 20.6A | SWITCHING | 62 ns | SILICON | N-Channel | 190m Ω @ 10A, 10V | 5V @ 250μA | 3055pF @ 100V | 78nC @ 10V | 11ns | 4.2 ns | 30V | 650V | 20.6A Tc | 400 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
| FCP11N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2004 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 15.9mm | 4.7mm | 380MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 94W | 13.6 ns | 2V | 94W Tc | 10.8A | SWITCHING | 42 ns | SILICON | N-Channel | 299m Ω @ 5.4A, 10V | 4V @ 250μA | 1505pF @ 100V | 35.6nC @ 10V | 9.1ns | 10 ns | 30V | 600V | 10.8A Tc | 10V | ±30V | |||||||||||||||||||||||||
| FDI030N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.29mm | ROHS3 Compliant | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 4.83mm | 9.65mm | Through Hole | 2.387g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 231W | 39 ns | 231W Tc | 193A | SWITCHING | 54 ns | SILICON | N-Channel | 3.2m Ω @ 75A, 10V | 4.5V @ 250μA | 9815pF @ 25V | 151nC @ 10V | 178ns | 33 ns | 20V | 60V | 120A Tc | 772A | 10V | ±20V | |||||||||||||||||||||||||||||||
| FDPF5N50T | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | 1.4Ohm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 28W | 13 ns | 28W Tc | 5A | SWITCHING | 28 ns | SILICON | N-Channel | 1.4 Ω @ 2.5A, 10V | 5V @ 250μA | 640pF @ 25V | 15nC @ 10V | 22ns | 20 ns | 30V | 500V | 5A | 5A Tc | 20A | 225 mJ | 10V | ±30V | |||||||||||||||||||||||||
| FQPF2N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 9 hours ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 2A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | 4.7Ohm | Through Hole | 2.27g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 23W | 9 ns | 4V | 23W Tc | 2A | SWITCHING | 24 ns | SILICON | N-Channel | 4.7 Ω @ 1A, 10V | 4V @ 250μA | 235pF @ 25V | 12nC @ 10V | 25ns | 28 ns | 30V | 600V | 2A | 2A Tc | 8A | 10V | ±30V | ||||||||||||||||||||||
| FQP6N90C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 6A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 2.3Ohm | Through Hole | 1.8g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 167W | 35 ns | 5V | 167W Tc | 6A | SWITCHING | 55 ns | SILICON | N-Channel | 2.3 Ω @ 3A, 10V | 5V @ 250μA | 1770pF @ 25V | 40nC @ 10V | 90ns | 60 ns | 30V | 900V | 900V | 5 V | 6A | 6A Tc | 24A | 650 mJ | 10V | ±30V | |||||||||||||||||||
| FQPF65N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 hours ago) | Through Hole | Tube | 2001 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | ISOLATED | Single | 56W | 20 ns | 4V | 56W Tc | 40A | SWITCHING | 90 ns | SILICON | N-Channel | 16m Ω @ 20A, 10V | 4V @ 250μA | 2410pF @ 25V | 65nC @ 10V | 160ns | 105 ns | 25V | 60V | 60V | 4 V | 40A Tc | 645 mJ | 10V | ±25V | |||||||||||||||||||||||
| FQPF6N90C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | 2.3Ohm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 56W | 35 ns | 5V | 56W Tc | 630 ns | 6A | SWITCHING | 55 ns | SILICON | N-Channel | 2.3 Ω @ 3A, 10V | 5V @ 250μA | 1770pF @ 25V | 40nC @ 10V | 90ns | 60 ns | 30V | 900V | 6A | 6A Tc | 24A | 650 mJ | 10V | ±30V | ||||||||||||||||||||||
| FQB6N80TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2000 | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 5.8A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.83mm | 9.65mm | 1.95Ohm | Surface Mount | 1.31247g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 3.13W | 30 ns | 5V | 3.13W Ta 158W Tc | 5.8A | SWITCHING | 65 ns | SILICON | N-Channel | 1.95 Ω @ 2.9A, 10V | 5V @ 250μA | 1500pF @ 25V | 31nC @ 10V | 70ns | 45 ns | 30V | 800V | 5.8A Tc | 680 mJ | 10V | ±30V | |||||||||||||||||||
| FDPF5N50NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | No SVHC | 15.87mm | 4.7mm | 1.5Ohm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 30W | 12 ns | 30W Tc | 4.5A | SWITCHING | 28 ns | SILICON | N-Channel | 1.5 Ω @ 2.25A, 10V | 5V @ 250μA | 440pF @ 25V | 12nC @ 10V | 22ns | 21 ns | 25V | 500V | 5 V | 4.5A Tc | 10V | ±25V | ||||||||||||||||||||||||||
| FDP8N50NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2010 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | 3 | TO-220-3 | 9.4mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 130W | 17 ns | 130W Tc | 8A | SWITCHING | 0.85Ohm | 500V | 43 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 735pF @ 25V | 18nC @ 10V | 34ns | 27 ns | 25V | 8A | 8A Tc | 500V | 10V | ±25V | ||||||||||||||||||||||||||
| FDP5N50NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 78W | 12 ns | 78W Tc | 4.5A | SWITCHING | 28 ns | SILICON | N-Channel | 1.5 Ω @ 2.25A, 10V | 5V @ 250μA | 440pF @ 25V | 12nC @ 10V | 22ns | 21 ns | 25V | 500V | 4.5A Tc | 10V | ±25V | ||||||||||||||||||||||||||||
| FDP7030BL | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2003 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 60A | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 9MOhm | Through Hole | 1.8g | -65°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 60W | 12 ns | 1.9V | 60W Tc | 60A | SWITCHING | 30 ns | SILICON | N-Channel | 9m Ω @ 30A, 10V | 3V @ 250μA | 1760pF @ 15V | 24nC @ 5V | 12ns | 19 ns | 20V | 30V | 60V | 1.9 V | 60A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||
| FDP18N20F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16.3mm | 4.7mm | 145MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 100W | 16 ns | 100W Tc | 18A | SWITCHING | 50 ns | SILICON | N-Channel | 145m Ω @ 9A, 10V | 5V @ 250μA | 1180pF @ 25V | 26nC @ 10V | 50ns | 40 ns | 30V | 200V | 18A Tc | 72A | 10V | ±30V | ||||||||||||||||||||||||||
| FQPF5N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 4.5A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | TO-220AB | ISOLATED | Single | 33W | 10 ns | 4V | 33W Tc | 4.5A | SWITCHING | 38 ns | SILICON | N-Channel | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 670pF @ 25V | 19nC @ 10V | 42ns | 46 ns | 30V | 600V | 4.5A Tc | 10V | ±30V | ||||||||||||||||||||||||||
| FQPF19N20C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2004 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 19A | No | 3 | TO-220-3 Full Pack | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 43W | 15 ns | 43W Tc | 19A | SWITCHING | 135 ns | SILICON | N-Channel | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 1080pF @ 25V | 53nC @ 10V | 150ns | 115 ns | 30V | 200V | 19A Tc | 76A | 10V | ±30V | ||||||||||||||||||||||||||
| FDP65N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 14 hours ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 65A | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 135W | 24 ns | 135W Tc | 65A | SWITCHING | 98 ns | SILICON | N-Channel | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 2170pF @ 25V | 43nC @ 10V | 94ns | 52 ns | 20V | 60V | 2 V | 65A Tc | 260A | 10V | ±20V | |||||||||||||||||||||||
| FQP6N40CF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | FRFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | R-PSFM-T3 | FET General Purpose Power | 1 | TO-220AB | Single | 73W | 13 ns | 73W Tc | 6A | SWITCHING | 21 ns | SILICON | N-Channel | 1.1 Ω @ 3A, 10V | 4V @ 250μA | 625pF @ 25V | 20nC @ 10V | 65ns | 38 ns | 30V | 400V | 6A | 6A Tc | 24A | 270 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||
| FQP44N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 43.5A | No | 3 | FAST SWITCHING | TO-220-3 | No SVHC | 9.4mm | 4.7mm | Through Hole | 1.8g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 146W | 19 ns | 4V | 146W Tc | 43.5A | SWITCHING | 90 ns | SILICON | N-Channel | 39m Ω @ 21.75A, 10V | 4V @ 250μA | 1800pF @ 25V | 62nC @ 10V | 190ns | 100 ns | 25V | 100V | 43.5A Tc | 10V | ±25V | |||||||||||||||||||||||||
| FDP2552 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2002 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 37A | No | 3 | TO-220-3 | 9.4mm | 4.83mm | 32MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 150W | 12 ns | 150W Tc | 37A | SWITCHING | 36 ns | SILICON | N-Channel | 36m Ω @ 16A, 10V | 4V @ 250μA | 2800pF @ 25V | 51nC @ 10V | 29ns | 29 ns | 20V | 150V | 5A | 5A Ta 37A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||
| FCP11N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | 2004 | SuperFET™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 11A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 380MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 1 | TO-220AB | Single | 125W | 34 ns | 5V | 125W Tc | 11A | SWITCHING | 119 ns | SILICON | N-Channel | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 1490pF @ 25V | 52nC @ 10V | 98ns | 56 ns | 30V | 600V | 11A Tc | 10V | ±30V | ||||||||||||||||||||||||||
| FDPF5N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2010 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 Full Pack | No SVHC | 15.87mm | 4.7mm | 2Ohm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 33W | 15 ns | 3V | 33W Tc | 4.5A | SWITCHING | 35 ns | SILICON | N-Channel | 2 Ω @ 2.25A, 10V | 5V @ 250μA | 600pF @ 25V | 13nC @ 10V | 20ns | 20 ns | 25V | 600V | 4.5A Tc | 10V | ±25V | ||||||||||||||||||||||||||
| FCPF1300N80Z | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2017 | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | 10.36mm | ROHS3 Compliant | 3 | TO-220-3 Full Pack | not_compliant | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 14 ns | 24W Tc | 4A | 33 ns | N-Channel | 1.3 Ω @ 2A, 10V | 4.5V @ 400μA | 880pF @ 100V | 21nC @ 10V | 8.3ns | 6 ns | 20V | 800V | 4A | 4A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDP3652 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | ACTIVE, NOT REC (Last Updated: 3 days ago) | Through Hole | Bulk | 2003 | PowerTrench® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 61A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 16MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | TO-220AB | DRAIN | Single | 150W | 12 ns | 4V | 150W Tc | 61A | SWITCHING | 26 ns | SILICON | N-Channel | 16m Ω @ 61A, 10V | 4V @ 250μA | 2880pF @ 25V | 53nC @ 10V | 85ns | 45 ns | 20V | 100V | 9A | 9A Ta 61A Tc | 6V 10V | ±20V |