Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPB60R380C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | HIGH VOLTAGE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 15 ns | 600V | 83W Tc | 10.6A | SWITCHING | 0.38Ohm | 110 ns | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10ns | 9 ns | 20V | 10.6A Tc | 30A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFS52N15DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 16 ns | 3.8W Ta 230W Tc | 60A | SWITCHING | 28 ns | SILICON | N-Channel | 32m Ω @ 36A, 10V | 5V @ 250μA | 2770pF @ 25V | 89nC @ 10V | 47ns | 25 ns | 30V | 150V | 150V | 5 V | 51A Tc | 240A | 470 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
IPD90P03P404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35 ns | -30V | 137W Tc | 90A | 0.0045Ohm | 70 ns | SILICON | P-Channel | 4.5m Ω @ 90A, 10V | 4V @ 253μA | 10300pF @ 25V | 130nC @ 10V | 10ns | 20 ns | 20V | 90A Tc | 30V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRL7833STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 3.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 140W Tc | 150A | SWITCHING | 21 ns | SILICON | N-Channel | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 4170pF @ 15V | 47nC @ 4.5V | 50ns | 6.9 ns | 20V | 30V | 75A | 150A Tc | 600A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF8010STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 80A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 15mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 260W | 15 ns | 4V | 260W Tc | 80A | SWITCHING | 61 ns | SILICON | N-Channel | 15m Ω @ 45A, 10V | 4V @ 250μA | 3830pF @ 25V | 120nC @ 10V | 130ns | 120 ns | 20V | 100V | 100V | 4 V | 75A | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||
IRF7580MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 10 | DirectFET™ Isometric ME | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 115W | 20 ns | 115W Tc | 114A | 53 ns | N-Channel | 3.6m Ω @ 70A, 10V | 3.7V @ 150μA | 6510pF @ 25V | 180nC @ 10V | 38ns | 21 ns | 20V | 114A Tc | 60V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPB47N10SL26ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | SIPMOS® | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 175W | 50 ns | 100V | 175W Tc | 47A | 0.04Ohm | SILICON | N-Channel | 26m Ω @ 33A, 10V | 2V @ 2mA | 2500pF @ 25V | 135nC @ 10V | 100ns | 70 ns | 20V | 47A Tc | 400 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSC016N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F3 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 19 ns | 60V | 2.5W Ta 139W Tc | 30A | 150°C | SWITCHING | 35 ns | SILICON | N-Channel | 1.6m Ω @ 50A, 10V | 2.8V @ 95μA | 5200pF @ 30V | 71nC @ 10V | 9ns | 9 ns | 20V | 60V | 30A Ta 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||
BSC009NE2LS5IATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 5 ns | 25V | 2.5W Ta 74W Tc | 40A | 150°C | SWITCHING | 27 ns | SILICON | N-Channel | 0.95m Ω @ 30A, 10V | 2V @ 250μA | 3200pF @ 12V | 49nC @ 10V | 33ns | 19 ns | 16V | 25V | 40A Ta 100A Tc | 400A | 50 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
IRFS7537TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 230W Tc | 173A | SWITCHING | 60V | 82 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 173A Tc | 60V | 700A | 554 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFS3307ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 230W | 26 ns | 230W Tc | 120A | SWITCHING | 0.0058Ohm | 51 ns | SILICON | N-Channel | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 4750pF @ 50V | 110nC @ 10V | 64ns | 65 ns | 20V | 75V | 120A Tc | 480A | 140 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPB60R180P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 72W Tc | SWITCHING | 0.18Ohm | 600V | SILICON | N-Channel | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 1081pF @ 400V | 25nC @ 10V | 18A Tc | 600V | 53A | 56 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF6216TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 240mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 2.5W | 18 ns | -5V | 2.5W Ta | 120 ns | -2.2A | 150°C | SWITCHING | 33 ns | SILICON | P-Channel | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 1280pF @ 25V | 49nC @ 10V | 15ns | 26 ns | 20V | -150V | 150V | 5 V | 2.2A Ta | 10V | ±20V | |||||||||||||||||||||||||||||
IRFS7734TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 20 ns | 290W Tc | 183A | SWITCHING | 124 ns | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 10150pF @ 25V | 270nC @ 10V | 123ns | 100 ns | 20V | 75V | 183A Tc | 650A | 670 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC0502NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 43W Tc | 100A | SWITCHING | SILICON | N-Channel | 2.3m Ω @ 30A, 10V | 2V @ 250μA | 1600pF @ 15V | 26nC @ 10V | 26A | 26A Ta 100A Tc | 400A | 14 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFR18N15DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 18A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 125mOhm | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 8.8 ns | 5.5V | 110W Tc | 18A | SWITCHING | 15 ns | SILICON | N-Channel | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 900pF @ 25V | 43nC @ 10V | 25ns | 9.8 ns | 30V | 150V | 150V | 5.5 V | 18A Tc | 72A | 200 mJ | 10V | ±30V | |||||||||||||||||||||||||||
IRFR48ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.3886mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.3876mm | 6.73mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Single | 91W | 15 ns | 91W Tc | 42A | SWITCHING | 40 ns | SILICON | N-Channel | 11m Ω @ 37A, 10V | 4V @ 50μA | 1720pF @ 25V | 60nC @ 10V | 61ns | 35 ns | 20V | 55V | 42A Tc | 250A | 74 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
IPD65R950CFDBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Cut Tape (CT) | 2012 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 36.7W Tc | SWITCHING | 0.95Ohm | 650V | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 380pF @ 100V | 14.1nC @ 10V | 3.9A | 3.9A Tc | 650V | 11A | 50 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFR2405TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.016Ohm | 55V | SILICON | N-Channel | 16m Ω @ 34A, 10V | 4V @ 250μA | 2430pF @ 25V | 110nC @ 10V | 30A | 56A Tc | 55V | 220A | 130 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPD50N04S308ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 68W | 11 ns | 40V | 68W Tc | 50A | 0.0075Ohm | 16 ns | SILICON | N-Channel | 7.5m Ω @ 50A, 10V | 4V @ 40μA | 2350pF @ 25V | 35nC @ 10V | 7ns | 6 ns | 20V | 50A Tc | 200A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRLR8743TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Single | 135W | 135W Tc | 160A | SWITCHING | SILICON | N-Channel | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 4880pF @ 15V | 59nC @ 4.5V | 35ns | 17 ns | 30V | 160A Tc | 640A | 250 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPD031N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 94W | 9 ns | 30V | 94W Tc | 90A | SWITCHING | 0.004Ohm | 34 ns | SILICON | N-Channel | 3.1m Ω @ 30A, 10V | 2.2V @ 250μA | 5300pF @ 15V | 51nC @ 10V | 6ns | 5 ns | 20V | 90A Tc | 400A | 60 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRLH6224TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.6W | 9.4 ns | 800mV | 3.6W Ta 52W Tc | 28A | 67 ns | N-Channel | 3m Ω @ 20A, 4.5V | 1.1V @ 50μA | 3710pF @ 10V | 86nC @ 10V | 23ns | 36 ns | 12V | 20V | 800 mV | 28A Ta 105A Tc | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRLU3915PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 30A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | 14mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 120W | 7.4 ns | 3V | 120W Tc | 61A | SWITCHING | 83 ns | SILICON | N-Channel | 14m Ω @ 30A, 10V | 3V @ 250μA | 1870pF @ 25V | 92nC @ 10V | 51ns | 100 ns | 16V | 55V | 55V | 3 V | 30A Tc | 240A | 200 mJ | 5V 10V | ±16V | ||||||||||||||||||||||||||||
IRFR1010ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W | 17 ns | 140W Tc | 91A | SWITCHING | 0.0075Ohm | 42 ns | SILICON | N-Channel | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 2840pF @ 25V | 95nC @ 10V | 76ns | 48 ns | 20V | 55V | 42A | 42A Tc | 220 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
IRF7495TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 7.3A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 22MOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | Single | 2.5W | 8.7 ns | 4V | 2.5W Ta | 7.3A | SWITCHING | 10 ns | SILICON | N-Channel | 22m Ω @ 4.4A, 10V | 4V @ 250μA | 1530pF @ 25V | 51nC @ 10V | 13ns | 36 ns | 20V | 100V | 100V | 4 V | 7.3A Ta | 10V | ±20V | |||||||||||||||||||||||||||||
IPD60R600E6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Bulk | 2008 | CoolMOS™ E6 | Not For New Designs | 1 (Unlimited) | 2 | -55°C | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 63W Tc | SWITCHING | 0.6Ohm | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 7.3A Tc | 19A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRLHS6242TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 2.1mm | ROHS3 Compliant | Lead Free | No | 6 | 6-PowerVDFN | No SVHC | 950μm | 2.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FET General Purpose Power | 1 | DRAIN | Single | 9.6W | 5.8 ns | 800mV | 1.98W Ta 9.6W Tc | 10A | SWITCHING | 19 ns | SILICON | N-Channel | 11.7m Ω @ 8.5A, 4.5V | 1.1V @ 10μA | 1110pF @ 10V | 14nC @ 4.5V | 15ns | 13 ns | 12V | 20V | 800 mV | 10A Ta 12A Tc | 88A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
BSC0909NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9.6 ns | 30V | 2.5W Ta 27W Tc | 44A | SWITCHING | 0.0091Ohm | 8.9 ns | SILICON | N-Channel | 9.2m Ω @ 20A, 10V | 2V @ 250μA | 1110pF @ 15V | 15nC @ 10V | 4.4ns | 5.4 ns | 20V | 12A | 12A Ta 44A Tc | 34V | 176A | 10 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IPD70R1K4P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 23W Tc | N-Channel | 1.4 Ω @ 700mA, 10V | 3.5V @ 40μA | 158pF @ 400V | 4.7nC @ 10V | 4A Tc | 700V | 10V | ±16V |
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